| PART |
Description |
Maker |
| CD214B-T6.5CALF CD214B-T6.5ALF CD214A-T6.5ALF CD21 |
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:100V; Breakdown Voltage, Vbr:111V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:150V; Breakdown Voltage, Vbr:167V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:20V; Breakdown Voltage, Vbr:22.2V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
CD214B Transient Voltage Suppressor Diode Series
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| TGL41-9.1 TGL41-20AHE3 TGL41-160/46HE3 TGL41-12A-2 |
Surface Mount TRANSZORBTransient Voltage Suppressors Peak Pulse Power 400W
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB
|
VISHAY SEMICONDUCTORS
|
| PHI214-20EL PH1214-20EL |
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
1200-1400 MHz,20 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics
MA-Com
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| P6KE20A P6KE P6KE200 P6KE18 P6KE100A P6KE82 P6KE33 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Power Amplifier Driver 32-VQFN -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Wireless 27MHz Dual receiver 28-TSSOP -40 to 85
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
|
RECTRON[Rectron Semiconductor]
Shanghai Sunrise Electronics
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PCA2003 PCA2003U_10AA |
32 kHz watch circuit with programmable adaptive motor pulse and pulse period
|
NXP Semiconductors
|
| SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| PH1214-25L PHI214-25L |
Radar Pulsed Power Transistor, 25W, 300us Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 1.6A I(C) | FO-41BVAR
|
Tyco Electronics
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| Z85230-20VSC Z85230-16VSC Z80230-10PSC Z85230-16PS |
FUSE - PTC 0.5/1A SMT 1812
DIODE TVS 7.5V 1.5KW BI-DIR
Communications Controller 通信控制
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:342V; Breakdown Voltage, Vbr:380V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:2.8A RoHS Compliant: Yes 通信控制
DIODE TVS 100V 1500W 5% BI AXL 通信控制
TVS Diode; Leaded Process Compatible:Yes RoHS Compliant: Yes
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Microsemi, Corp.
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